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|Title:||Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry||Authors:||Pey, Kin Leong
Lee, Pooi See
|Keywords:||DRNTU::Engineering::Materials||Issue Date:||2003||Source:||Mangelinck, D., Lee, P. S., Osipowitcz, T., & Pey, K. L. (2004). Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 215(3-4), 495-500.||Series/Report no.:||Nuclear instruments and methods in Physics research Section B: beam interactions with materials and atoms||Abstract:||A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed.||URI:||https://hdl.handle.net/10356/97163
|ISSN:||0168-583X||DOI:||10.1016/j.nimb.2003.08.040||Rights:||© 2003 Elsevier B.V.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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