Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97163
Title: Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry
Authors: Pey, Kin Leong
Lee, Pooi See
Mangelinck, D.
Osipowitcz, T.
Keywords: DRNTU::Engineering::Materials
Issue Date: 2003
Source: Mangelinck, D., Lee, P. S., Osipowitcz, T., & Pey, K. L. (2004). Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 215(3-4), 495-500.
Series/Report no.: Nuclear instruments and methods in Physics research Section B: beam interactions with materials and atoms
Abstract: A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed.
URI: https://hdl.handle.net/10356/97163
http://hdl.handle.net/10220/10518
ISSN: 0168-583X
DOI: http://dx.doi.org/10.1016/j.nimb.2003.08.040
Rights: © 2003 Elsevier B.V.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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