Please use this identifier to cite or link to this item:
|Title:||Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device||Authors:||Yuan, C. L.
Lee, Pooi See
|Issue Date:||2006||Source:||Yuan, C. L., Darmawan, P., Setiawan, Y., & Lee, P. S. (2006). Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device. Nanotechnology, 17(13), 3175-3177.||Series/Report no.:||Nanotechnology||Abstract:||We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O3 high-k dielectric. The mean size and aerial density of the SiO2 nanocrystals embedded in Lu2O3 are estimated to be about 7 nm and 6 × 1011cm−2, respectively. This metal–oxide–semiconductor capacitor can be operated under smaller operation voltages, and exhibits a large memory window with a good retention time.||URI:||https://hdl.handle.net/10356/97344
|ISSN:||0957-4484||DOI:||http://dx.doi.org/10.1088/0957-4484/17/13/016||Rights:||© 2006 IOP Publishing Ltd.||metadata.item.grantfulltext:||none||metadata.item.fulltext:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.