Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97344
Title: Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device
Authors: Yuan, C. L.
Darmawan, P.
Setiawan, Y.
Lee, Pooi See
Issue Date: 2006
Source: Yuan, C. L., Darmawan, P., Setiawan, Y., & Lee, P. S. (2006). Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device. Nanotechnology, 17(13), 3175-3177.
Series/Report no.: Nanotechnology
Abstract: We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O3 high-k dielectric. The mean size and aerial density of the SiO2 nanocrystals embedded in Lu2O3 are estimated to be about 7 nm and 6 × 1011cm−2, respectively. This metal–oxide–semiconductor capacitor can be operated under smaller operation voltages, and exhibits a large memory window with a good retention time.
URI: https://hdl.handle.net/10356/97344
http://hdl.handle.net/10220/10537
ISSN: 0957-4484
DOI: 10.1088/0957-4484/17/13/016
Rights: © 2006 IOP Publishing Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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