dc.contributor.authorYuan, C. L.
dc.contributor.authorDarmawan, P.
dc.contributor.authorSetiawan, Y.
dc.contributor.authorLee, Pooi See
dc.date.accessioned2013-06-24T07:04:01Z
dc.date.available2013-06-24T07:04:01Z
dc.date.copyright2006en_US
dc.date.issued2006
dc.identifier.citationYuan, C. L., Darmawan, P., Setiawan, Y., & Lee, P. S. (2006). Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device. Nanotechnology, 17(13), 3175-3177.en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://hdl.handle.net/10220/10537
dc.description.abstractWe have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O3 high-k dielectric. The mean size and aerial density of the SiO2 nanocrystals embedded in Lu2O3 are estimated to be about 7 nm and 6 × 1011cm−2, respectively. This metal–oxide–semiconductor capacitor can be operated under smaller operation voltages, and exhibits a large memory window with a good retention time.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesNanotechnologyen_US
dc.rights© 2006 IOP Publishing Ltd.en_US
dc.titleFormation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory deviceen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1088/0957-4484/17/13/016


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