Please use this identifier to cite or link to this item:
|Title:||Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor||Authors:||Ong, Hock Guan
Cheah, Jun Wei
Cao, X. H.
Han, G. C.
|Issue Date:||2011||Source:||Ong, H. G., Cheah, J. W., Zou, X., Li, B., Cao, X. H., Tantang, H., et al. (2011). Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor. Journal of physics D : applied physics, 44(28).||Series/Report no.:||Journal of physics D: applied physics||Abstract:||Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube–SiO2 interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO2 surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues.||URI:||https://hdl.handle.net/10356/97319
|ISSN:||0022-3727||DOI:||http://dx.doi.org/10.1088/0022-3727/44/28/285301||Rights:||© 2011 IOP Publishing Ltd.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.