Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97319
Title: Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor
Authors: Ong, Hock Guan
Cheah, Jun Wei
Zou, X.
Li, B.
Cao, X. H.
Tantang, Hosea
Li, L.-J.
Zhang, Hua
Han, G. C.
Wang, J.
Issue Date: 2011
Source: Ong, H. G., Cheah, J. W., Zou, X., Li, B., Cao, X. H., Tantang, H., et al. (2011). Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor. Journal of physics D : applied physics, 44(28).
Series/Report no.: Journal of physics D: applied physics
Abstract: Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube–SiO2 interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO2 surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues.
URI: https://hdl.handle.net/10356/97319
http://hdl.handle.net/10220/10541
ISSN: 0022-3727
DOI: http://dx.doi.org/10.1088/0022-3727/44/28/285301
Rights: © 2011 IOP Publishing Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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