Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85273
Title: Improved electrical property of Sb-doped SnO2 nanonets as measured by contact and non-contact approaches
Authors: Liu, Hongwei
Sun, Cheng
Lu, Junpeng
Zheng, Minrui
Lim, Kim Yong
Mathews, Nripan
Mhaisalkar, Subodh Gautam
Tang, Sing Hai
Zhang, Xinhai
Sow, Chorng Haur
Issue Date: 2012
Source: Liu, H., Sun, C., Lu, J., Zheng, M., Lim, K. Y., Mathews, N., et al. (2012). Improved electrical property of Sb-doped SnO2 nanonets as measured by contact and non-contact approaches. RSC Advances, 2(25), 9590-9595.
Series/Report no.: RSC advances
Abstract: This work reports the characterization of antimony doping effects on the electron transportation in SnO2 nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring the output characteristics of the devices. In addition, through the analysis of the terahertz time-domain spectra using Drude–Smith model, the non-contact method provides more precise characterization ascribed to the absence of extra effects such as contact resistance and nanowire–nanowire junction barriers.
URI: https://hdl.handle.net/10356/85273
http://hdl.handle.net/10220/10579
ISSN: 2046-2069
DOI: http://dx.doi.org/10.1039/c2ra20973j
Rights: © 2012 The Royal Society of Chemistry.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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