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      Size-suppressed dielectrics of Ge nanocrystals : skin-deep quantum entrapment

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      Author
      Goh, Eunice S. M.
      Chen, Tupei
      Yang, H. Y.
      Liu, Y.
      Sun, Changqing
      Date of Issue
      2012
      School
      School of Electrical and Electronic Engineering
      Abstract
      Although the dielectric behavior of nanostructured semiconductors has been intensively investigated, the physics behind observations remains disputed with possible mechanisms such as quantum confinement and dangling bond polarization. Here we show that theoretical reproduction of the measured dielectric suppression of Ge nanocrystals asserts that the dielectric suppression originates from the shorter and stronger bonds at the skin-deep surface, the associated local densification and quantum entrapment of energy. Coordination-imperfection induced local quantum entrapment perturbs the Hamiltonian that determines the band gap and hence, the process of electron polarization consequently.
      Subject
      DRNTU::Engineering::Electrical and electronic engineering
      Type
      Journal Article
      Series/Journal Title
      Nanoscale
      Rights
      © 2012 The Royal Society of Chemistry.
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      • EEE Journal Articles
      http://dx.doi.org/10.1039/c2nr11154c
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