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      Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis

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      Author
      Mata, Maria de la
      Magen, Cesar
      Gazquez, Jaume
      Utama, Muhammad Iqbal Bakti
      Heiss, Martin
      Lopatin, Sergei
      Furtmayr, Florian
      Fernández-Rojas, Carlos J.
      Peng, Bo
      Morante, Joan Ramon
      Rurali, Riccardo
      Eickhoff, Martin
      Morral, Anna Fontcuberta i.
      Xiong, Qihua
      Arbiol, Jordi
      Date of Issue
      2012
      School
      School of Electrical and Electronic Engineering
      School of Physical and Mathematical Sciences
      Abstract
      Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds in two extreme cases: (i) when the dumbbell is formed with atoms of similar mass (GaAs) and (ii) in the case where one of the atoms is extremely light (N or O: ZnO and GaN/AlN). The theoretical fundaments of these procedures allow us to overcome the main challenge in the identification of dumbbell polarity. It resides in the separation and identification of the constituent atoms in the dumbbells. The proposed experimental via opens new routes for the fine characterization of nanostructures, e.g., in electronic and optoelectronic fields, where the polarity is crucial for the understanding of their physical properties (optical and electronic) as well as their growth mechanisms.
      Type
      Journal Article
      Series/Journal Title
      Nano letters
      Rights
      © 2012 American Chemical Society.
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      • SPMS Journal Articles
      http://dx.doi.org/10.1021/nl300840q
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