dc.contributor.authorLiu, Keng-Ku
dc.contributor.authorZhang, Wenjing
dc.contributor.authorLee, Yi-Hsien
dc.contributor.authorLin, Yu-Chuan
dc.contributor.authorChang, Mu-Tung
dc.contributor.authorSu, Ching-Yuan
dc.contributor.authorChang, Chia-Seng
dc.contributor.authorLi, Hai
dc.contributor.authorShi, Yumeng
dc.contributor.authorZhang, Hua
dc.contributor.authorLai, Chao-Sung
dc.contributor.authorLi, Lain-Jong
dc.identifier.citationLiu, K.-K., Zhang, W., Lee, Y.-H., Lin, Y.-C., Chang, M.-T., Su, C.-Y., et al. (2012). Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates. Nano Letters, 12(3), 1538-1544.en_US
dc.description.abstractThe two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS2 thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS2 sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS2 layer is comparable with those of the micromechanically exfoliated thin sheets from MoS2 crystals. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.en_US
dc.relation.ispartofseriesNano lettersen_US
dc.rights© 2012 American Chemical Society.en_US
dc.titleGrowth of large-area and highly crystalline MoS2 thin layers on insulating substratesen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US

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