dc.contributor.authorHuang, Hui
dc.contributor.authorLim, Chiew Keat
dc.contributor.authorTse, Man Siu
dc.contributor.authorGuo, Jun
dc.contributor.authorTan, Ooi Kiang
dc.date.accessioned2013-06-27T01:18:23Z
dc.date.available2013-06-27T01:18:23Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationHuang, H., Lim, C. K., Tse, M. S., Guo, J., & Tan, O. K. (2012). SnO2 nanorod arrays: low temperature growth, surface modification and field emission properties. Nanoscale, 4(5), 1491-1496.en_US
dc.identifier.issn2040-3364en_US
dc.identifier.urihttp://hdl.handle.net/10220/10743
dc.description.abstractSnO2 nanorod arrays have been deposited on 4 inch SiO2/Si and Si wafers and stainless steel substrates by plasma-enhanced chemical vapor deposition without any high temperature treatment or additional catalysis. The SnO2 nanorods grow up from seed nanocrystals along the [110] preferential direction by a self-catalyzed vapor–solid growth mechanism. The surface of the SnO2 nanorods was modified by ZnO, Pt and Ni nanocrystals. After surface modification, the field emission properties of the SnO2 nanorod arrays are improved. The Ni nanocrystal with sharp tips and edges act as additional field emission sites to SnO2 nanorods and thus the Ni/SnO2/SiO2/Si outperforms other samples due to the synergistic effects of good conductivity and hierarchical sharp apexes. The field enhancement factor of the Ni/SnO2/SiO2/Si increased around 3 times while the turn-on field of 8.0 V μm−1 is about one third of the SnO2/SiO2/Si device.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesNanoscaleen_US
dc.rights© 2012 The Royal Society of Chemistry.en_US
dc.titleSnO2 nanorod arrays : low temperature growth, surface modification and field emission propertiesen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1039/c1nr10710k


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