dc.contributor.authorWang, L. J.
dc.contributor.authorYang, Y.
dc.contributor.authorZeng, Y. G.
dc.contributor.authorWang, L. J.
dc.contributor.authorTong, Cunzhu
dc.contributor.authorShan, X. N.
dc.contributor.authorZhao, H. X.
dc.contributor.authorWang, R.
dc.contributor.authorYoon, Soon Fatt
dc.date.accessioned2013-06-27T02:29:56Z
dc.date.available2013-06-27T02:29:56Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationWang, L. J., Yang, Y., Zeng, Y. G., Wang, L. J., Tong, C., Shan, X. N., et al. (2012). High power single-sided Bragg reflection waveguide lasers with dual-lobed far field. Applied physics B, 107(3), 809-812.en_US
dc.identifier.issn0946-2171en_US
dc.identifier.urihttp://hdl.handle.net/10220/10764
dc.description.abstractWe report on 980-nm InGaAs/GaAs lasers with dual-lobed far field based on a single-sided Bragg reflection waveguide (BRW). The high slope efficiency ∼0.92 W/A and a continuous wave (CW) output power >1.5 W (3.2 W pulsed) have been obtained. The threshold current density is as low as 253 A/cm2 for a 1.5-mm-long device and the transparency current density is only 140 A/cm2. The further analysis shows the intrinsic reason for the single-lobed or the dual-lobed far-field distribution is determined by the mode shape in the cavity, not the single-sided or dual-sided BRW structure. The condition to achieve a narrow single-lobed far-field distribution is discussed.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesApplied physics Ben_US
dc.rights© 2012 Springer-Verlag.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleHigh power single-sided Bragg reflection waveguide lasers with dual-lobed far fielden_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1007/s00340-012-5034-5


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