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Title: Observation of the semiconductor–metal transition behavior in monolayer graphene
Authors: Liu, Yanping
Lew, Wen Siang
Goolaup, Sarjoosing
Shen, Zexiang
Sun, L.
Zhou, T. J.
Wong, S. K.
Issue Date: 2012
Source: Liu, Y. P., Lew, W. S., Goolaup, S., Shen, Z. X., Sun, L., Zhou, T. J., et al. (2012). Observation of the semiconductor–metal transition behavior in monolayer graphene. Carbon, 50(6), 2273-2279.
Series/Report no.: Carbon
Abstract: We have observed that during temperature-dependent four-terminal resistance measurement of monolayer graphene, the resistance exhibits anomalous rising and falling behavior at different temperature regions. At lower temperature region (2–200 K) the resistance decreases gradually, but when the temperature rise further it turn to a sudden increase, and after 280 K it resumes gradual decrease. The rising and falling resistance behavior is characteristic of semiconductor or metal property. Consequently, the resistance transition follows a phase of semiconductor–metal–semiconductor. However, when a perpendicular magnetic field is applied, the resistance shows reverse transition behavior which follows a sequence of metal–semiconductor–metal. The novel transition property is attributed to the competition between the disorder of lattice defects as a short-range scattering in monolayer graphene and the Landau levels interaction. Magneto-transport measurement reveals that the excitonic gap induced by magnetic field in the monolayer graphene show an anomalous thermally activated property.
ISSN: 0008-6223
DOI: 10.1016/j.carbon.2012.01.046
Rights: © 2012 Elsevier Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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