Please use this identifier to cite or link to this item:
|Title:||Observation of the semiconductor–metal transition behavior in monolayer graphene||Authors:||Liu, Yanping
Lew, Wen Siang
Zhou, T. J.
Wong, S. K.
|Issue Date:||2012||Source:||Liu, Y. P., Lew, W. S., Goolaup, S., Shen, Z. X., Sun, L., Zhou, T. J., et al. (2012). Observation of the semiconductor–metal transition behavior in monolayer graphene. Carbon, 50(6), 2273-2279.||Series/Report no.:||Carbon||Abstract:||We have observed that during temperature-dependent four-terminal resistance measurement of monolayer graphene, the resistance exhibits anomalous rising and falling behavior at different temperature regions. At lower temperature region (2–200 K) the resistance decreases gradually, but when the temperature rise further it turn to a sudden increase, and after 280 K it resumes gradual decrease. The rising and falling resistance behavior is characteristic of semiconductor or metal property. Consequently, the resistance transition follows a phase of semiconductor–metal–semiconductor. However, when a perpendicular magnetic field is applied, the resistance shows reverse transition behavior which follows a sequence of metal–semiconductor–metal. The novel transition property is attributed to the competition between the disorder of lattice defects as a short-range scattering in monolayer graphene and the Landau levels interaction. Magneto-transport measurement reveals that the excitonic gap induced by magnetic field in the monolayer graphene show an anomalous thermally activated property.||URI:||https://hdl.handle.net/10356/96168
|ISSN:||0008-6223||DOI:||http://dx.doi.org/10.1016/j.carbon.2012.01.046||Rights:||© 2012 Elsevier Ltd.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||SPMS Journal Articles|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.