dc.contributor.authorLuo, Zhiqiang
dc.contributor.authorCong, Chunxiao
dc.contributor.authorZhang, Jun
dc.contributor.authorXiong, Qihua
dc.contributor.authorYu, Ting
dc.date.accessioned2013-06-27T06:30:14Z
dc.date.available2013-06-27T06:30:14Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationLuo, Z., Cong, C., Zhang, J., Xiong, Q., & Yu, T. (2012). The origin of sub-bands in the Raman D-band of graphene. Carbon, 50(11), 4252-4258.en_US
dc.identifier.issn0008-6223en_US
dc.identifier.urihttp://hdl.handle.net/10220/10809
dc.description.abstractIn Raman spectroscopy investigations of defective suspended graphene, splitting in the D band is observed. Four double resonance Raman scattering processes: the outer and inner scattering processes, as well as the scattering processes with electrons first scattered by phonons (“phonon-first”) or by defects (“defect-first”), are found to be responsible for these features of the D band. The D sub-bands associated with the outer and inner processes merge with increasing defect concentration. However a Stokes/anti-Stokes Raman study indicates that the splitting of the D band due to the separate “phonon-first” and “defect-first” processes is valid for suspended graphene. For graphene samples on a SiO2/Si substrate, the sub-bands of D band merge due to the increased Raman broadening parameter resulting from the substrate doping. Moreover, the merging of the sub-bands shows excitation energy dependence, which can be understood by considering the energy dependent lifetime and/or scattering rate of photo-excited carriers in the Raman scattering process.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesCarbonen_US
dc.rights© 2012 Elsevier Ltd.en_US
dc.titleThe origin of sub-bands in the Raman D-band of grapheneen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1016/j.carbon.2012.05.008


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