Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95968
Title: The electrical properties of graphene modified by bromophenyl groups derived from a diazonium compound
Authors: Dong, Xiaochen
Long, Qing
Wei, Ang
Zhang, Wenjing
Li, Lain-Jong
Chen, Peng
Huang, Wei
Keywords: DRNTU::Engineering::Bioengineering
Issue Date: 2011
Source: Dong, X., Long, Q., Wei, A., Zhang, W., Li, L. J., Chen, P., et al. (2011). The electrical properties of graphene modified by bromophenyl groups derived from a diazonium compound. Carbon, 50(4), 1517-1522.
Series/Report no.: Carbon
Abstract: Graphene field-effect transistors were fabricated with mechanically exfoliated single-layer graphene (SLG) and bilayer graphene (BLG) sheets and the functionalization effects of bromophenyl groups derived from a diazonium compound on its transfer properties were explored. Spectroscopic and electrical studies reveal that the bromophenyl grafting imposes p-doping to both SLG and BLG. The modification of SLG by bromophenyl groups significantly reduces the hole carrier mobility and the saturation current in SLG transistors, suggesting an increase in both long-range impurity and short-range defect scattering. Unexpectedly, the bromophenyl group functionalization on BLG does not obviously increase both types of scattering, indicating that the BLG is relatively more resistant to charge- or defect-induced scattering. The results indicate that chemical modification is a simple approach to tailor the electrical properties of graphene sheets with different numbers of layers.
URI: https://hdl.handle.net/10356/95968
http://hdl.handle.net/10220/10818
ISSN: 0008-6223
DOI: http://dx.doi.org/10.1016/j.carbon.2011.11.029
Rights: © 2011 Elsevier Ltd.
metadata.item.grantfulltext: none
metadata.item.fulltext: No Fulltext
Appears in Collections:SCBE Journal Articles

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