Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95267
Title: Band gap measurement of SrFeO3−δ by ultraviolet photoelectron spectroscopy and photovoltage method
Authors: Huang, H.
Ghaffari, Mohammad
Tan, Ooi Kiang
Shannon, Mark
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Ghaffari, M., Huang, H., Tan, O. K., & Shannon, M. (2012). Band gap measurement of SrFeO3−δ by ultraviolet photoelectron spectroscopy and photovoltage method. CrystEngComm, 14(21), 7487-7492.
Series/Report no.: CrystEngComm
Abstract: There are very important characteristics of partial substitution of the cations at both A and B sites in ABO3 perovskite structure. In this report, SrFeO(3−δ) (SFO) photocatalyst powder was synthesized by a high temperature solid state reaction method. The morphology and crystalline structure of the obtained samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and transmission electron microscopy (TEM). The XRD, TEM and SAED patterns indicated that a single cubic perovskite phase of SrFeO(3−δ) (SFO) oxide has been successfully synthesized. The surface composition of the SrFeO(3−δ) sample was characterized by X-ray photoelectron spectroscopy (XPS). The XPS results showed that the iron existing in the SrFeO(3−δ) perovskite structure is composed of a mixture of Fe3+ and Fe4+. Due to the high absorbance of the SrFeO(3−δ) powder, the Kubelka–Munk model and UV–visible measurement were not applicable. Therefore, in order to study the band positions further, the valence band edges for electronic band gaps were obtained for SrFeO(3−δ) by ultraviolet photoelectron spectroscopy (UPS) while the conduction band position was obtained by photovoltage method.
URI: https://hdl.handle.net/10356/95267
http://hdl.handle.net/10220/10820
ISSN: 1466-8033
DOI: http://dx.doi.org/10.1039/c2ce25751c
Rights: © 2012 The Royal Society of Chemistry.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
SIMTech Journal Articles

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.