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|Title:||Photocarrier generation in CuxO thin films deposited by radio frequency sputtering||Authors:||Pham, Thien Viet
Jinesh, K. B.
|Issue Date:||2013||Source:||Pham, T. V., Rao, M., Andreasson, P., Peng, Y., Wang, J., & Jinesh, K. B. (2013). Photocarrier generation in CuxO thin films deposited by radio frequency sputtering. Applied Physics Letters, 102(3), 032101-.||Series/Report no.:||Applied physics letters||Abstract:||Copper oxides (CuxO) thin films were deposited using radio frequency (RF) sputtering on glass substrates. By tuning the argon (Ar) partial pressure during deposition, cuprous oxide (Cu2O), cupric oxide (CuO), or their mixed phase could be achieved. Drastic variations in the Hall mobility, hole density, and resistivity of the samples were observed due to the presence of different phases in the films. Kelvin probe studies indicate that the photo-generated carriers have lower recombination rate in pure Cu2O phase. This was further validated by transient absorption measurements, where the estimated carrier lifetime for Cu2O was much larger that other phases.||URI:||https://hdl.handle.net/10356/99026
|ISSN:||0003-6951||DOI:||10.1063/1.4788680||Rights:||© 2013 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4788680]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
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