Please use this identifier to cite or link to this item:
|Title:||Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor||Authors:||Lin, Jiadan
|Issue Date:||2013||Source:||Lin, J., Li, H., Zhang, H., & Chen, W. (2013). Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor. Applied Physics Letters, 102(20).||Series/Report no.:||Applied physics letters||Abstract:||The two-dimensional material, molybdenum disulfide (MoS2), has attracted considerable attention for numerous applications in optoelectronics. Here, we demonstrate a plasmonic enhancement of photocurrent in MoS2 field-effect-transistor decorated with gold nanoparticles, with significantly enhanced photocurrent peaked at the plasmon resonant wavelength around 540 nm. Our findings offer a possibility to realize wavelength selectable photodetection in MoS2 based phototransistors.||URI:||https://hdl.handle.net/10356/100811
|ISSN:||0003-6951||DOI:||10.1063/1.4807658||Rights:||© 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4807658]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
Files in This Item:
|22. Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor.pdf||1.15 MB||Adobe PDF|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.