Please use this identifier to cite or link to this item:
|Title:||Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films||Authors:||Ilyas, Usman
Rawat, Rajdeep Singh
Tan, T. L.
|Issue Date:||2012||Source:||Ilyasa, U., Rawat, R. S., Wang, Y., Tan, T. L., Lee, P., Chen, P., et al. (2012). Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films. Applied surface science, 258(17), 6373–6378.||Series/Report no.:||Applied surface science||Abstract:||The un-doped and Mn doped ZnO thin films, with oxygen rich stoichiometry, were deposited onto Si (1 0 0) substrate using spin coating technique. The structural analysis revealed the hexagonal wurtzite structure without any impurity phase formation. A consistent increase in cell volume with the increase in Mn doping concentration confirmed the successful incorporation of bigger sized tetrahedral Mn2+ ions (0.83 Å) in ZnO host matrix that was also endorsed by the presence of Mn 2p3/2 core level XPS spectroscopic peak. Extended deep level emission (DLE) spectra centered at ∼627 nm confirmed the presence of oxygen interstitials. Moreover, the magnetic measurements of field dependent M–H curves revealed the origin of ferromagnetic ordering from Mn-defect pair exchange coupling with oxygen interstitials in ZnO host matrix.||URI:||https://hdl.handle.net/10356/100524
|ISSN:||0169-4332||DOI:||10.1016/j.apsusc.2012.03.043||Rights:||© 2012 Elsevier B.V.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MAE Journal Articles|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.