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      A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures

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      A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures.pdf (205.1Kb)
      Author
      Lau, Wai Shing.
      Date of Issue
      2012
      School
      School of Electrical and Electronic Engineering
      Version
      Published version
      Abstract
      Historically, there has been a controversy regarding whether the leakage current versus voltage (I-V) relationship is governed by the Schottky mechanism or by the Poole-Frenkel (P-F) mechanism for several decades. For the P-F mechanism, the I-V characteristics is expected to be symmetrical. In this paper, the author points out that there is an extra mechanism for symmetrical I-V characteristics.
      Subject
      DRNTU::Engineering::Electrical and electronic engineering
      Type
      Journal Article
      Series/Journal Title
      ECS transactions
      Rights
      © 2012 The Electrochemical Society. This paper was published in ECS Transactions and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/1.3700881]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
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      http://dx.doi.org/10.1149/1.3700881
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