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https://hdl.handle.net/10356/100632| Title: | A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures | Authors: | Lau, Wai Shing. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Lau, W. S. (2012). A New Mechanism of Symmetry of Current-Voltage Characteristics for High-k Dielectric Capacitor Structures. ECS Transactions,45(3), 151-158. | Series/Report no.: | ECS transactions | Abstract: | Historically, there has been a controversy regarding whether the leakage current versus voltage (I-V) relationship is governed by the Schottky mechanism or by the Poole-Frenkel (P-F) mechanism for several decades. For the P-F mechanism, the I-V characteristics is expected to be symmetrical. In this paper, the author points out that there is an extra mechanism for symmetrical I-V characteristics. | URI: | https://hdl.handle.net/10356/100632 http://hdl.handle.net/10220/11035 |
ISSN: | 1938-6737 | DOI: | http://dx.doi.org/10.1149/1.3700881 | Rights: | © 2012 The Electrochemical Society. This paper was published in ECS Transactions and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/1.3700881]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Journal Articles |
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