An extended unified Schottky-Poole-Frenkel theory to explain the current-voltage characteristics of capacitors using high-k dielectric materials.
Lau, Wai Shing.
Date of Issue2012
School of Electrical and Electronic Engineering
Historically, there is a controversy regarding the current-voltage (I-V) characteristics of thin film MIM (metal-insulator-metal) capacitors, which is quite frequently modeled by either the Schottky model or the Poole-Frenkel model. In this letter, the author points out that the two models actually can be unified. The physics underlying this model involves a non-uniform distribution of defect states such that a very large quantity of defect states exist at the two interface of the MIM capacitor while the density of defect states in the insulator bulk is relatively low, resulting in an M/n-i-n/M structure. This unified Schottky-Poole-Frenkel model can be further extended to include other effects like space charge limited current, tunneling, etc. Evidence supporting this theory will be provided.
DRNTU::Engineering::Electrical and electronic engineering
© 2012 The Electrochemical Society. This paper was published in ECS Transactions and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/1.3700884]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.