Mechanism of difficulty to study the physics of leakage current reduction by nitridation of silicon before high-k dielectric deposition due to change in nucleation characteristics and some other factors.
Lau, Wai Shing.
Date of Issue2012
School of Electrical and Electronic Engineering
It is expected that the leakage current can be reduced by nitridation of silicon before high-k dielectric deposition. In reality, it is not so simple because the nucleation of high-k dielectric on nitrided silicon may be different from the nucleation on silicon. In addition, the interfacial layer between the high-k dielectric becomes thinner because of the nitridation. Furthermore, the bandgap of the interfacial layer becomes smaller due to the nitridation. However, there may be less defect states in the high-k dielectric because of the nitridation. More in-depth study is needed to clarify whether leakage current is really reduced by nitridation. Experimental observation indicates the leakage current can be increased or decreased by nitridation depending on the details of the processing conditions. However, the capacitance is usually increased by nitridation; reduction of capacitance due to RTN is an unusual observation but it is possible.
DRNTU::Engineering::Electrical and electronic engineering
© 2012 The Electrochemical Society. This paper was published in ECS Transactions and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/1.3700882]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.