Please use this identifier to cite or link to this item:
Title: Electronic structures and transport properties of fluorinated boron nitride nanoribbons
Authors: Zeng, Jing
Chen, Ke-Qiu
Sun, Changqing
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Zeng, J., Chen, K.-Q., Sun, C. (2012). Electronic structures and transport properties of fluorinated boron nitride nanoribbons. Physical chemistry chemical physics, 14(22), 8032-8037.
Series/Report no.: Physical chemistry chemical physics
Abstract: By applying the nonequilibrium Green's functions and the density-functional theory, we investigate the electronic structures and transport properties of fluorinated zigzag-edged boron nitride nanoribbons. The results show that the transition between half-metal and semiconductor in zigzag-edged boron nitride nanoribbons can be realized by fluorination at different sites or by the change of the fluorination level. Moreover, the negative differential resistance and varistor-type behaviors can also be observed in such fluorinated zigzag-edged boron nitride nanoribbon devices. Therefore, the fluorination of zigzag-edged boron nitride nanoribbons will provide the possibilities for a multifunctional molecular device design.
DOI: 10.1039/C2CP23937J
Rights: © 2012 Then Owner Societies.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.