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|Title:||Electronic structures and transport properties of fluorinated boron nitride nanoribbons||Authors:||Zeng, Jing
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Zeng, J., Chen, K.-Q., Sun, C. (2012). Electronic structures and transport properties of fluorinated boron nitride nanoribbons. Physical chemistry chemical physics, 14(22), 8032-8037.||Series/Report no.:||Physical chemistry chemical physics||Abstract:||By applying the nonequilibrium Green's functions and the density-functional theory, we investigate the electronic structures and transport properties of fluorinated zigzag-edged boron nitride nanoribbons. The results show that the transition between half-metal and semiconductor in zigzag-edged boron nitride nanoribbons can be realized by fluorination at different sites or by the change of the fluorination level. Moreover, the negative differential resistance and varistor-type behaviors can also be observed in such fluorinated zigzag-edged boron nitride nanoribbon devices. Therefore, the fluorination of zigzag-edged boron nitride nanoribbons will provide the possibilities for a multifunctional molecular device design.||URI:||https://hdl.handle.net/10356/101335
|DOI:||http://dx.doi.org/10.1039/C2CP23937J||Rights:||© 2012 Then Owner Societies.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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