Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96165
Title: Perspective of flash memory realized on vertical Si nanowires
Authors: Yu, Hongyu
Sun, Yuan
Singh, Navab
Lo, Guo-Qing
Kwong, Dim Lee
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2011
Series/Report no.: Microelectronics reliability
Abstract: In this review article, the scaling challenges of planar non-volatile memory, especially the flash-types including both floating gate-based and charge-trap-based devices are firstly discussed. The promising prospects brought by 3-Dimensional (3-D) nano-wire-based cells have been presented along with various device demonstrations and discussions on vertical nano-wire platform. The memory devices with highly scaled single-crystal Si nanowire (SiNW) channel and a gate-all-around (GAA) structure achieve superior program/erase (P/E) speed, cycling and high-temperature retention characteristics as compared to the planar one and are considered as promising candidate for future ultra-high non-volatile flash memory application.
URI: https://hdl.handle.net/10356/96165
http://hdl.handle.net/10220/11120
DOI: 10.1016/j.microrel.2011.10.025
Rights: © 2011 Elsevier Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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