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|Title:||4H-SiC wafers studied by X-ray absorption and Raman scattering||Authors:||Mendis, Suwan P.
Sun, Hua Yang
Tin, Chin Che
Qiu, Zhi Ren
Liu, Chee Wee
Feng, Zhe Chuan
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials||Issue Date:||2012||Abstract:||Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding and PL-Raman properties are obtained from these comparative studies.||URI:||https://hdl.handle.net/10356/97866
|DOI:||http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.509||Rights:||© 2012 Trans Tech Publications, Switzerland.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Conference Papers|
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