4H-SiC wafers studied by X-ray absorption and Raman scattering
Sun, Hua Yang
Mendis, Suwan P.
Tin, Chin Che
Qiu, Zhi Ren
Liu, Chee Wee
Feng, Zhe Chuan
Date of Issue2012
Silicon Carbide and Related Materials (2011)
School of Electrical and Electronic Engineering
Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding and PL-Raman properties are obtained from these comparative studies.
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
© 2012 Trans Tech Publications, Switzerland.