Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97866
Title: 4H-SiC wafers studied by X-ray absorption and Raman scattering
Authors: Mendis, Suwan P.
Xu, Qiang
Sun, Hua Yang
Chen, Cheng
Jang, Ling-Yun
E. Rusli
Tin, Chin Che
Qiu, Zhi Ren
Wu, Zhengyun
Liu, Chee Wee
Feng, Zhe Chuan
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Issue Date: 2012
Abstract: Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding and PL-Raman properties are obtained from these comparative studies.
URI: https://hdl.handle.net/10356/97866
http://hdl.handle.net/10220/11147
DOI: http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.509
Rights: © 2012 Trans Tech Publications, Switzerland.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.