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|Title:||Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement||Authors:||Ang, X. F.
Leong, K. C.
Tan, Chuan Seng
Lim, Dau Fatt
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Microelectronics||Issue Date:||2011||Series/Report no.:||Microelectronics reliability||Abstract:||Self-assembled monolayer (SAM) of alkane-thiol is formed on copper (Cu) thin layer coated on silicon (Si) wafer with the aim to protect the surface against excessive oxidation during storage in the room ambient. After 3 days of storage, the temporary SAM layer is desorbed with in situ anneal in inert ambient to uncover the clean Cu surface. A pair of wafers is bonded at 250 °C. Clear evidences of in-plane and out-of-plane Cu grain growth are observed resulting in a wiggling bonding interface. This gives rise to enhancement in shear strength in the bonded Cusingle bondCu layer.||URI:||https://hdl.handle.net/10356/96042
|DOI:||10.1016/j.microrel.2011.04.003||Rights:||© 2011 Elsevier Ltd.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||SIMTech Journal Articles|
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