The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current
Lau, W. S.
Siah, S. Y.
Date of Issue2012
School of Electrical and Electronic Engineering
Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity. In this paper, we report that the sensitivity of a silicon-based mechanical sensor can be significantly improved by simply monitoring the gate-induced-drain leakage (GIDL) current of an n-channel MOS transistor. The role of a tensile mechanical stress bias will also be discussed.
DRNTU::Engineering::Electrical and electronic engineering
© 2012 Elsevier Ltd.