Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102542
Title: The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current
Authors: Lau, W. S.
Yang, Peizhen.
Siah, S. Y.
Chan, L.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Series/Report no.: Microelectronics reliability
Abstract: Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity. In this paper, we report that the sensitivity of a silicon-based mechanical sensor can be significantly improved by simply monitoring the gate-induced-drain leakage (GIDL) current of an n-channel MOS transistor. The role of a tensile mechanical stress bias will also be discussed.
URI: https://hdl.handle.net/10356/102542
http://hdl.handle.net/10220/11296
DOI: 10.1016/j.microrel.2012.06.111
Rights: © 2012 Elsevier Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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