Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95927
Title: A 60-V, > 225°C half-bridge driver for piezoelectric acoustic transducer, on SOI CMOS
Authors: Goh, Wang Ling
Arasu, Muthukumaraswamy Annamalai
Je, Minkyu
Yu, Jun
Issue Date: 2012
Source: Yu, J., Goh, W. L., Arasu, M. A., & Je, M. (2012). A 60-V, > 225°C Half-Bridge Driver for Piezoelectric Acoustic Transducer, on SOI CMOS. IEEE Transactions on Circuits and Systems II: Express Briefs, 59(11), 771-775.
Series/Report no.: IEEE transactions on circuits and systems II : express briefs
Abstract: This brief presents a high-voltage (HV) transducer driver to fulfill the requirement of the proposed high-data-rate down-hole acoustic telemetry system. The driver is targeted to drive a stack of piezoelectric disks modeled as a capacitive load of 0.3 μF and across a broadband from 600 Hz to 1.2 kHz. To ensure stability, the driver is designed as an open-loop system, comprising a dead-time controller, level shifters, gate drivers, and power MOSFETs. The driver is fabricated using the 1.0- μm silicon-on-insulator CMOS process and its performance is investigated up to 260 °C, far beyond the specified process limit of 225 °C. The experimental results also validated the functionality of the HV Class-D-type driver for voltages up to 60 V.
URI: https://hdl.handle.net/10356/95927
http://hdl.handle.net/10220/11320
ISSN: 1549-7747
DOI: http://dx.doi.org/10.1109/TCSII.2012.2228396
Rights: © 2012 IEEE.
metadata.item.grantfulltext: none
metadata.item.fulltext: No Fulltext
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