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|Title:||A 60-V, > 225°C half-bridge driver for piezoelectric acoustic transducer, on SOI CMOS||Authors:||Goh, Wang Ling
Arasu, Muthukumaraswamy Annamalai
|Issue Date:||2012||Source:||Yu, J., Goh, W. L., Arasu, M. A., & Je, M. (2012). A 60-V, > 225°C Half-Bridge Driver for Piezoelectric Acoustic Transducer, on SOI CMOS. IEEE Transactions on Circuits and Systems II: Express Briefs, 59(11), 771-775.||Series/Report no.:||IEEE transactions on circuits and systems II : express briefs||Abstract:||This brief presents a high-voltage (HV) transducer driver to fulfill the requirement of the proposed high-data-rate down-hole acoustic telemetry system. The driver is targeted to drive a stack of piezoelectric disks modeled as a capacitive load of 0.3 μF and across a broadband from 600 Hz to 1.2 kHz. To ensure stability, the driver is designed as an open-loop system, comprising a dead-time controller, level shifters, gate drivers, and power MOSFETs. The driver is fabricated using the 1.0- μm silicon-on-insulator CMOS process and its performance is investigated up to 260 °C, far beyond the specified process limit of 225 °C. The experimental results also validated the functionality of the HV Class-D-type driver for voltages up to 60 V.||URI:||https://hdl.handle.net/10356/95927
|ISSN:||1549-7747||DOI:||http://dx.doi.org/10.1109/TCSII.2012.2228396||Rights:||© 2012 IEEE.||metadata.item.grantfulltext:||none||metadata.item.fulltext:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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