Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97897
Title: Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device
Authors: Vaddi, Ramesh
Pott, Vincent
Chua, Geng Li
Lin, Julius Tsai Ming
Kim, Tony Tae-Hyoung
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Series/Report no.: IEEE electron device letters
Abstract: This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data storage. The anchor-free electrode facilitates better scalability compared to conventional anchored NEM devices, which is desirable for circuit applications. The structure is electrostatically actuated and has low operating voltage. A novel memory cell consisting of the proposed NEM memory device and two MOS transistors (1NEM-2T) is proposed for array implementation. The scalability analysis of the proposed NEM NVM array is also presented.
URI: https://hdl.handle.net/10356/97897
http://hdl.handle.net/10220/11330
DOI: http://dx.doi.org/10.1109/LED.2012.2206364
Rights: © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at DOI: [http://dx.doi.org/10.1109/LED.2012.2206364].
metadata.item.grantfulltext: open
metadata.item.fulltext: With Fulltext
Appears in Collections:EEE Journal Articles

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.