Correlation between oxide trap generation and negative-bias temperature instability.
Boo, A. A.
Ang, Diing Shenp
Teo, Z. Q.
Leong, K. C.
Date of Issue2012
School of Electrical and Electronic Engineering
Evidence shows that substantial interface degradation under negative-bias temperature (NBT) stressing does not result in any apparent oxide trap generation. The link between NBT instability and oxide trap generation is actually found in the recoverable hole-trapping component (R) of the former. When R is constant, independent of the number of stress/relaxation cycles, no apparent oxide trap generation is observed in spite of nonnegligible interface degradation. However, when oxide trap generation occurs, a correlated decrease of R is observed. Analysis shows that the generated oxide traps are due to a portion of the trapped holes being transformed into a more permanent form. A possible explanation based on the oxygen vacancy defect is given.
DRNTU::Engineering::Electrical and electronic engineering
IEEE electron device letters
© 2012 IEEE.