dc.contributor.authorSingh, Pushpapraj
dc.contributor.authorMiao, Jianmin
dc.contributor.authorPott, Vincent
dc.contributor.authorPark, Woo-Tae
dc.contributor.authorKwong, Dim Lee
dc.date.accessioned2013-07-15T01:28:48Z
dc.date.available2013-07-15T01:28:48Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.urihttp://hdl.handle.net/10220/11345
dc.description.abstractThis letter investigates junctionless nanowire field-effect transistor (NWFET) (JL-NWFET) parameters such as piezoresistance and low-frequency noise (LFN) with respect to channel doping and gate bias. The JL-NWFET is piezoresistive, and its gauge factor (GF ) is increased from 24 to 47 by reducing the channel doping ten times from 6.7 × 1019 to 6.7 × 1018 cm-3. Significant variations of GF and LFN are observed when the JL-NWFET is operated from subthreshold to on-state regime, and resolution (minimum detectable strain) is improved four times compared to inversion-mode NWFET. The simple fabrication and superior resolution formulate JL-NWFET as a promising sensing element for miniaturized nanoelectromechanical sensors.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesIEEE electron device lettersen_US
dc.rights© 2012 IEEE.en_US
dc.subjectDRNTU::Engineering::Mechanical engineering
dc.titlePiezoresistive sensing performance of junctionless nanowire FETen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Mechanical and Aerospace Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/LED.2012.2217112


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