dc.contributor.authorChan, L. H. K.
dc.contributor.authorYeo, Kiat Seng
dc.contributor.authorChew, Kok Wai Johnny
dc.contributor.authorOng, Shih Ni
dc.contributor.authorLoo, Xi Sung
dc.contributor.authorBoon, Chirn Chye
dc.contributor.authorDo, Manh Anh
dc.date.accessioned2013-07-15T01:44:18Z
dc.date.available2013-07-15T01:44:18Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.urihttp://hdl.handle.net/10220/11347
dc.description.abstractIn this letter, a drain current noise model that includes the channel thermal noise and the shot noise generated at the source-bulk junction and the drain-bulk junction is presented. A unified analytical expression is derived to ensure excellent continuity with smooth transition of drain current noise from weak- to strong-inversion regimes, including the moderate-inversion region. Excellent agreement between simulated and extracted noise data has shown that the proposed model is accurate over different dimensions and operating conditions.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesIEEE electron device lettersen_US
dc.rights© 2012 IEEE.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleMOSFET drain current noise modeling with effective gate overdrive and junction noiseen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/LED.2012.2203781


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