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|Title:||A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture||Authors:||Liu, W. J.
Yeo, Y. C.
Nguyen, B. Y.
Tran, Xuan Anh
|Issue Date:||2012||Series/Report no.:||IEEE electron device letters||Abstract:||In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state (>; 700 at 0.2 V), a high on/off resistance ratio (>;103), a good retention characteristic (>; 104 s at 100 °C ), and a wide readout margin for cross-bar architecture (number of word line N >; 25 for worst case condition).||URI:||https://hdl.handle.net/10356/97956
|DOI:||http://dx.doi.org/10.1109/LED.2012.2210855||Rights:||© 2012 IEEE.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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