Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97956
Title: A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
Authors: Liu, W. J.
Yeo, Y. C.
Nguyen, B. Y.
Tran, Xuan Anh
Zhu, Wei
Yu, Hongyu
Issue Date: 2012
Series/Report no.: IEEE electron device letters
Abstract: In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state (>; 700 at 0.2 V), a high on/off resistance ratio (>;103), a good retention characteristic (>; 104 s at 100 °C ), and a wide readout margin for cross-bar architecture (number of word line N >; 25 for worst case condition).
URI: https://hdl.handle.net/10356/97956
http://hdl.handle.net/10220/11358
DOI: http://dx.doi.org/10.1109/LED.2012.2210855
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.