Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission
Liang, Y. Y.
Yoon, Soon Fatt
Ngo, C. Y.
Loke, Wan Khai
Fitzgerald, Eugene A.
Date of Issue2012
School of Electrical and Electronic Engineering
GaAs-based quantum dot (QD) systems, especially InAs/InGaAs/GaAs QDs, have demonstrated superior device performances as compared with higher dimensional systems. However, to realize high-speed optical interconnects for Si-based electronics, one will need to grow the QDs on Si substrates. While it is promising to integrate the InAs/InGaAs/GaAs QDs on Si with the use of germanium-on-insulator-on-silicon (GeOI) substrates, reported results exhibit bimodal QD sizes and double emission peaks, i.e. unsatisfactory for realistic applications. In this paper, we showed that with an optimized GaAs buffer, single-peak 1.33 µm room-temperature emission can be obtained from InAs/InGaAs/GaAs QDs on GeOI substrates.
DRNTU::Engineering::Electrical and electronic engineering
Journal of physics D : applied physics
© 2012 IOP Publishing Ltd.