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|Title:||AlN nanowires : synthesis, physical properties, and nanoelectronics applications||Authors:||Kenry
Yu, Siu Fung
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Kenry , Yong, K.-T., & Yu, S. F. (2012). AlN nanowires: synthesis, physical properties, and nanoelectronics applications. Journal of Materials Science, 47(14), 5341-5360.||Series/Report no.:||Journal of materials science||Abstract:||One-dimensional aluminum nitride (AlN) nanostructures, especially AlN nanowires, have been subjected to numerous investigations due to their unique physical properties and applications ranging from electronics to biomedical. This article reviews the synthesis of AlN nanowires and studies their physical properties and potential nanoelectronics applications. First, the different fabrication techniques used to synthesize AlN nanowires and their growth mechanisms are discussed. Next, the physical properties of AlN nanowires, such as the field emission, transport, photoluminescence, as well as the mechanical and piezoelectric properties are summarized. Finally, the potential applications of AlN nanowires in the field of nanoelectronics are described. Furthermore, this review summarizes the perspectives and outlooks on the future development of AlN nanowires.||URI:||https://hdl.handle.net/10356/96234
|DOI:||10.1007/s10853-012-6388-0||Rights:||© 2012 Springer Science+Business Media, LLC.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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