Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95990
Title: Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides
Authors: Chen, Y. S.
Kang, J. F.
Chen, B.
Liu, L. F.
Liu, X. Y.
Wang, Y. Y.
Wu, L.
Wang, J. Y.
Chen, Q.
Wang, E. G.
Gao, Bin
Yu, Hongyu
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Chen, Y. S., Kang, J. F., Chen, B., Gao, B., Liu, L. F., Liu, X. Y., et al. (2012). Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides. Journal of Physics D: Applied Physics, 45(6).
Series/Report no.: Journal of physics D : applied physics
Abstract: A microscopic mechanism for the unipolar resistive switching phenomenon in nickel oxides is proposed based on the thermal decomposition of oxygen ions from oxygen-rich clusters and their recombination with electron-depleted vacancies induced by local electric field in conductive filaments. The proposed physical feature is confirmed by x-ray photoelectron spectroscopy, transmission electron microscopy and electrical measurements in the as-deposited NiOx samples. The deduced formulae under reasonable approximations directly demonstrate the relationships of switching parameters that were widely observed and questioned in different material systems, indicating the universal validity of the proposed mechanism.
URI: https://hdl.handle.net/10356/95990
http://hdl.handle.net/10220/11385
DOI: http://dx.doi.org/10.1088/0022-3727/45/6/065303
Rights: © 2012 IOP Publishing Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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