Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96468
Title: Solution-processed CuZn1−xAlxS2 : a new memory material with tuneable electrical bistability
Authors: Jinesh, K. B.
Batabyal, Sudip Kumar
Chandra, R. Devi
Huang, Yizhong
Keywords: DRNTU::Engineering::Materials
Issue Date: 2012
Source: Jinesh, K. B., Batabyal, S. K., Chandra, R. D., & Huang, Y. (2012). Solution-processed CuZn1−xAlxS2: a new memory material with tuneable electrical bistability. Journal of Materials Chemistry, 22(38), 20149-20152.
Series/Report no.: Journal of materials chemistry
Abstract: CuZn1−xAlxS2 (CZAS) thin films deposited by the chemical spray pyrolysis (CSP) technique exhibit reversible electrical bistability in current–voltage measurements. The threshold voltage and current for switching can be tuned by the initial voltage applied to reset the device. X-ray diffraction and high-resolution transmission electron microscopy imaging show that the initial crystal structure of CZAS is similar to CuAlS2 with slightly expanded lattices due to the presence of Zn. The electrical memory effect in this material is observed only when both Zn and Al are present in the film, indicating that migration of interstitial Al towards the anode may be the origin of this memory effect.
URI: https://hdl.handle.net/10356/96468
http://hdl.handle.net/10220/11389
DOI: 10.1039/c2jm33471b
Rights: © 2012 The Royal Society of Chemistry.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:ERI@N Journal Articles
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