Solution-processed CuZn1−xAlxS2 : a new memory material with tuneable electrical bistability
Jinesh, K. B.
Batabyal, Sudip Kumar
Chandra, R. Devi
Date of Issue2012
School of Materials Science and Engineering
Energy Research Institute
CuZn1−xAlxS2 (CZAS) thin films deposited by the chemical spray pyrolysis (CSP) technique exhibit reversible electrical bistability in current–voltage measurements. The threshold voltage and current for switching can be tuned by the initial voltage applied to reset the device. X-ray diffraction and high-resolution transmission electron microscopy imaging show that the initial crystal structure of CZAS is similar to CuAlS2 with slightly expanded lattices due to the presence of Zn. The electrical memory effect in this material is observed only when both Zn and Al are present in the film, indicating that migration of interstitial Al towards the anode may be the origin of this memory effect.
Journal of materials chemistry
© 2012 The Royal Society of Chemistry.