Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95864
Title: The upper limit of thermoelectric figure of merit : importance of electronic thermoelectric efficiency
Authors: Li, Jing
Yeung, Tin Cheung Au
Kam, Chan Hin
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Li, J., Yeung, T. C. A., & Kam, C. H. (2012). The upper limit of thermoelectric figure of merit: importance of electronic thermoelectric efficiency. Journal of Physics D: Applied Physics, 45(8).
Series/Report no.: Journal of physics D : applied physics
Abstract: To improve thermoelectric (TE) efficiency, the physical phenomenon of TE effect is revisited. The important TE figure of merit (FOM) is expressed in terms of powers, and it is mapped by two fundamental quantities. One is the electronic TE efficiency, which is purely determined by a probability distribution function of electron transport. Furthermore, electronic TE efficiency plays an important role in the upper limit of TE FOM, which is an important index to judge the quality of a TE device. For any TE device with FOM more than one, its electronic TE efficiency must be greater than 0.5. For demonstration purpose, the TE properties of silicon nanowire are investigated.
URI: https://hdl.handle.net/10356/95864
http://hdl.handle.net/10220/11391
DOI: 10.1088/0022-3727/45/8/085102
Rights: © 2012 IOP Publishing Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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