Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films
Li, Y. F.
Pan, H. L.
Li, J. C.
Zhang, L. G.
Zhao, H. F.
Shen, D. Z.
Date of Issue2012
School of Physical and Mathematical Sciences
We report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn1−xCuxO1−ySy) alloy thin films with high hole concentration. The Zn0.91Cu0.09O0.92S0.08 alloy thin films with a hole concentration of 4.3 × 1019 cm−3 show the strongest magnetization of 1.5μB/Cu. First-principles calculation shows that high hole concentration stabilizes the ferromagnetic ordering in the Zn1−xCuxO1−ySy system, indicating a strong correlation between ferromagnetic stability and hole concentration. These results suggest that the Zn1−xCuxO1−ySy alloy with high hole concentration is promising to find applications in spintronic devices.
Journal of physics D : applied physics
© 2012 IOP Publishing Ltd.