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https://hdl.handle.net/10356/96863
Title: | Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate | Authors: | Arulkumaran, Subramaniam Ng, Geok Ing Vicknesh, Sahmuganathan Wang, Hong Ang, Kian Siong Tan, Joyce Pei Ying Lin, Vivian Kaixin Todd, Shane Lo, Guo-Qiang Tripathy, Sudhiranjan |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Arulkumaran, S., Ng, G. I., Vicknesh, S., Wang, H., Ang, K. S., Tan, J. P. Y., et al. (2012). Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate. Japanese Journal of Applied Physics, 51. | Series/Report no.: | Japanese journal of applied physics | Abstract: | We report for the first time the DC and microwave characteristics of sub-micron gate (∼0.3 µm) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. The fabricated sub-micron gate devices on crack-free AlGaN/GaN HEMT structures exhibited good pin.-off characteristics with a maximum drain current density of 853 mA/mm and a maximum extrinsic transconductance of 180 mS/mm. The device exhibited unit current-gain cut-off frequency of 28 GHz, maximum oscillation frequency of 64 GHz and OFF-state breakdown voltage of 60 V. This work demonstrates the feasibility of achieving good performance AlGaN/GaN HEMTs on 8-in. diameter Si(111) for low-cost high-frequency and high-power switching applications. | URI: | https://hdl.handle.net/10356/96863 http://hdl.handle.net/10220/11617 |
ISSN: | 0021-4922 | DOI: | 10.1143/JJAP.51.111001 | Schools: | School of Electrical and Electronic Engineering | Research Centres: | Temasek Laboratories | Rights: | © 2012 The Japan Society of Applied Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Japanese journal of applied physics, The Japan Society of Applied Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1143/JJAP.51.111001]. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles TL Journal Articles |
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DC and Microwave Characteristics of Sub-micron AlGaN_GaN High-Electron-Mobility Transistors on 8-inch Si 111 Substrate.pdf | 1.6 MB | Adobe PDF | View/Open |
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