dc.contributor.authorArulkumaran, Subramaniam
dc.contributor.authorNg, Geok Ing
dc.contributor.authorVicknesh, Sahmuganathan
dc.contributor.authorWang, Hong
dc.contributor.authorAng, Kian Siong
dc.contributor.authorTan, Joyce Pei Ying
dc.contributor.authorLin, Vivian Kaixin
dc.contributor.authorTodd, Shane
dc.contributor.authorLo, Guo-Qiang
dc.contributor.authorTripathy, Sudhiranjan
dc.date.accessioned2013-07-16T08:38:09Z
dc.date.available2013-07-16T08:38:09Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationArulkumaran, S., Ng, G. I., Vicknesh, S., Wang, H., Ang, K. S., Tan, J. P. Y., et al. (2012). Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate. Japanese Journal of Applied Physics, 51.en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/10220/11617
dc.description.abstractWe report for the first time the DC and microwave characteristics of sub-micron gate (∼0.3 µm) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. The fabricated sub-micron gate devices on crack-free AlGaN/GaN HEMT structures exhibited good pin.-off characteristics with a maximum drain current density of 853 mA/mm and a maximum extrinsic transconductance of 180 mS/mm. The device exhibited unit current-gain cut-off frequency of 28 GHz, maximum oscillation frequency of 64 GHz and OFF-state breakdown voltage of 60 V. This work demonstrates the feasibility of achieving good performance AlGaN/GaN HEMTs on 8-in. diameter Si(111) for low-cost high-frequency and high-power switching applications.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJapanese journal of applied physicsen_US
dc.rights© 2012 The Japan Society of Applied Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Japanese journal of applied physics, The Japan Society of Applied Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1143/JJAP.51.111001].en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleDirect current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrateen_US
dc.typeJournal Article
dc.contributor.researchTemasek Laboratoriesen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1143/JJAP.51.111001
dc.description.versionAccepted version


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