Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97137
Title: Surface nanostructure optimization for GaAs solar cell application
Authors: Hong, Lei
Rusli
Yu, Hongyu
Wang, Xincai
Wang, Hao
Zheng, Hongyu
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Hong, L., Rusli, Yu, H., Wang, X., Wang, H., & Zheng, H. (2012). Surface Nanostructure Optimization for GaAs Solar Cell Application. Japanese Journal of Applied Physics, 51.
Series/Report no.: Japanese journal of applied physics
Abstract: Numerical simulation of optical absorption characteristics of gallium arsenide (GaAs) thin-film solar cells by the three-dimensional finite element method is presented, with emphasis on optimizing geometric parameters for nanowire and nanocone structures to maximize the ultimate photocurrent under AM1.5G illumination. The nanostructure-based GaAs thin-film solar cells have demonstrated a much higher photocurrent than the planar thin films owing to their much suppressed reflection and high light trapping capability. The nanowire structure achieves its highest ultimate photocurrent of 29.43 mA/cm2 with a periodicity (P) of 300 nm and a wire diameter of 180 nm. In contrast, the nanocone array structure offers the best performance with an ultimate photocurrent of 32.14 mA/cm2. The results obtained in this work provide useful guidelines for the design of high-efficiency nanostructure-based GaAs solar cells.
URI: https://hdl.handle.net/10356/97137
http://hdl.handle.net/10220/11636
ISSN: 0021-4922
DOI: http://dx.doi.org/10.1143/JJAP.51.10ND13
Rights: © 2012 The Japan Society of Applied Physics.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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