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|Title:||Surface nanostructure optimization for GaAs solar cell application||Authors:||Hong, Lei
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Hong, L., Rusli, Yu, H., Wang, X., Wang, H., & Zheng, H. (2012). Surface Nanostructure Optimization for GaAs Solar Cell Application. Japanese Journal of Applied Physics, 51.||Series/Report no.:||Japanese journal of applied physics||Abstract:||Numerical simulation of optical absorption characteristics of gallium arsenide (GaAs) thin-film solar cells by the three-dimensional finite element method is presented, with emphasis on optimizing geometric parameters for nanowire and nanocone structures to maximize the ultimate photocurrent under AM1.5G illumination. The nanostructure-based GaAs thin-film solar cells have demonstrated a much higher photocurrent than the planar thin films owing to their much suppressed reflection and high light trapping capability. The nanowire structure achieves its highest ultimate photocurrent of 29.43 mA/cm2 with a periodicity (P) of 300 nm and a wire diameter of 180 nm. In contrast, the nanocone array structure offers the best performance with an ultimate photocurrent of 32.14 mA/cm2. The results obtained in this work provide useful guidelines for the design of high-efficiency nanostructure-based GaAs solar cells.||URI:||https://hdl.handle.net/10356/97137
|ISSN:||0021-4922||DOI:||http://dx.doi.org/10.1143/JJAP.51.10ND13||Rights:||© 2012 The Japan Society of Applied Physics.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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