Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96810
Title: Fourier transform infrared spectroscopy of low-k dielectric material on patterned wafers
Authors: Huang, Maggie Y. M.
Lam, Jeffrey Chorkeung
Tan, Hao
Zhang, Fan
Sun, Handong
Shen, Zexiang
Mai, Zhihong
Issue Date: 2012
Source: Lam, J. C., Tan, H., Huang, M. Y., Zhang, F., Sun, H., Shen, Z., et al. (2012). Fourier Transform Infrared Spectroscopy of Low-k Dielectric Material on Patterned Wafers. Japanese Journal of Applied Physics, 51.
Series/Report no.: Japanese journal of applied physics
Abstract: With many of research on Fourier transform IR (FTIR) on low-k materials, our experiments extended the FTIR spectroscopy application to characterization and analysis of the low-k dielectric thin film properties on patterned wafers. FTIR spectra on low-k materials were successfully captured under three sampling modes: reflection, attenuated total reflectance (ATR), and mapping mode. ATR mode is more suitable for CHx band than reflection mode due to its higher sensitivity in this range. FTIR spectroscopy signal analysis on mixed structures (metal and low-k dielectric material) on patterned wafers was also investigated with mapping mode. Based on our investigation, FTIR can be used for low-k material studies on patterned wafer.
URI: https://hdl.handle.net/10356/96810
http://hdl.handle.net/10220/11660
ISSN: 0021-4922
DOI: http://dx.doi.org/10.1143/JJAP.51.111501
Rights: © 2012 The Japan Society of Applied Physics.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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