dc.contributor.authorTang, Xiaohong
dc.contributor.authorZhao, Jinghua
dc.contributor.authorTeng, Jing Hua
dc.contributor.authorYong, Anna Marie
dc.date.accessioned2013-07-17T03:34:46Z
dc.date.available2013-07-17T03:34:46Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationTang, X., Zhao, J., Teng, J. H., & Yong, A. M. (2012). An atomic ordering based AlInP unicompositional quantum well grown by MOVPE. Journal of crystal growth, 356, 1-3.en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://hdl.handle.net/10220/11674
dc.description.abstractAn AlInP unicompositional single quantum well (QW) structure has been grown and studied by using metal-organic vapor phase epitaxy (MOVPE). The energy bandgap offset of the quantum well is achieved by taking the advantage of the AlInP epilayer’s bandgap energy reduction induced by its CuPt–B type spontaneous atomic ordering instead of by changing the QW layers’ compositions during the MOVPE growth. The degree of the CuPt–B atomic ordering of the AlInP epilayers of the QW structure was controlled by adjusting the input V/III flux ratio during the MOVPE growth. Low temperature photoluminescence (PL) measurement shows strong quantum confinement effect of the grown AlInP unicompositional QWs. After annealing at 900 °C for 30 s, the peak emission wavelength of the QW was measured. It remained at the same wavelength as that of the AlInP barrier layer, which showed the disappearance of the quantum confinement effect of the QW structure. This is attributed to the elimination of the CuPt–B atomic ordering of the AlInP epilayers of the QW sample under a high temperature annealing. The QW structure became a thick disordered AlInP bulky layer after the thermal annealing.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of crystal growthen_US
dc.rights© 2012 Elsevier B.V.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleAn atomic ordering based AlInP unicompositional quantum well grown by MOVPEen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1016/j.jcrysgro.2012.06.049


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