dc.contributor.authorQiu, Haodong
dc.contributor.authorWang, Hong
dc.contributor.authorKe, Feixiang
dc.date.accessioned2013-07-18T02:14:04Z
dc.date.available2013-07-18T02:14:04Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationQiu, H., Wang, H., & Ke, F. (2012). Studies on the transitional behaviors of Au-to-Au micro-contact during the initialization stage of contact formation under low contact force. 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems(EuroSimE).en_US
dc.identifier.urihttp://hdl.handle.net/10220/11820
dc.description.abstractIn nowadays, ohmic-contact MEMS switches have been widely studied due to their variously advantages, such as high isolation, low insertion loss, negligible power consumption and so on. The micro-contact behavior has been analyzed by several researchers using the conventional asperity deformation model, in which the electrical contact resistance decreases gradually with increasing contact force and finally reaches a saturation region. This paper presents a study of the instable region of micro-contact behaviors under low contact force and low current conditions, where the conventional model does not seems to be applicable. Random telegraph signals (RTS) were captured during the transition period before the establishment of stable electrical contact. An electrothermal approach was applied in our work and the time constants of the RTS during instable region are extracted statistically from the experimental data. The fundamental mechanism for the contact resistance instabilities were discussed under the framework of material transfer enhanced by localized Joule heating.en_US
dc.language.isoenen_US
dc.rights© 2012 IEEE.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleStudies on the transitional behaviors of Au-to-Au micro-contact during the initialization stage of contact formation under low contact forceen_US
dc.typeConference Paper
dc.contributor.conferenceInternational Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (13th : 2012 : Cascais, Portugal)en_US
dc.contributor.researchResearch Techno Plazaen_US
dc.contributor.researchTemasek Laboratoriesen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/ESimE.2012.6191804


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