Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97328
Title: Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage
Authors: Gao, Bin
Yu, Hongyu
Kang, J. F.
Chen, B.
Liu, L. F.
Liu, X. Y.
Wang, Z. R.
Yu, B.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Kang, J. F., Gao, B., Chen, B., Liu, L. F., Liu, X. Y., Yu, H., et al. (2012). Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage. 2012 4th IEEE International Memory Workshop.
Abstract: A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resistive switching layer and (ii) innovative operation scheme to control the distribution of oxygen vacancy conducting filaments during the switching. Excellent memory performance with four-level data storage is successfully demonstrated in hafnium-oxide-based RRAM devices, indicating the viability of the proposed engineering design strategy.
URI: https://hdl.handle.net/10356/97328
http://hdl.handle.net/10220/11838
DOI: http://dx.doi.org/10.1109/IMW.2012.6213664
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

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