Enhanced and continuous electrostatic carrier doping on the SrTiO3 surface
Eyvazov, A. B.
Inoue, I. H.
Rozenberg, M. J.
Date of Issue2013
School of Physical and Mathematical Sciences
Paraelectrical tuning of a charge carrier density as high as 10 13 cm-2 in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta2 O5 hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO3, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to ∼1013 cm-2 carriers, while the field-effect mobility is kept at 10 cm2/Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO3. Namely, the formation and continuous evolution of field domains and current filaments.
© 2013 The Authors(Nature Publishing Group). This paper was published in Scientific Reports and is made available as an electronic reprint (preprint) with permission of The Authors(Nature Publishing Group). The paper can be found at the following official DOI: [http://dx.doi.org/10.1038/srep01721]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.