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|Title:||Amorphous/crystalline silicon heterojunction solar cells via remote inductively coupled plasma processing||Authors:||Xu, L. X.
Xiao, S. Q.
Zhou, H. P.
Wei, D. Y.
Huang, S. Y.
Sern, C. C.
Guo, Y. N.
|Keywords:||DRNTU::Science::Physics||Issue Date:||2012||Source:||Xiao, S. Q., Xu, S., Zhou, H. P., Wei, D. Y., Huang, S. Y., Xu, L. X., et al. (2012). Amorphous/crystalline silicon heterojunction solar cells via remote inductively coupled plasma processing. Applied Physics Letters, 100(23), 233902-233902-4.||Series/Report no.:||Applied physics letters||Abstract:||Low-frequency inductively coupled plasma (ICP) has been widely used to deposit amorphous or microcrystalline Si thin films, but the intrinsic drawback namely ion bombardment effect limits its application in Si heterojunction solar cells. In this letter, we redesigned typical ICP and realized a remote plasma deposition with suppressed ion bombardment effect. This remote ICP system enables the synthesis of high quality amorphous Si layers with a compact network and a high hydrogen content (10.5%). By using this remote ICP system, we achieved amorphous/crystalline silicon heterojunction solar cells with an efficiency of 14.1% without any back surface field or textures.||URI:||https://hdl.handle.net/10356/97916
|ISSN:||0003-6951||DOI:||http://dx.doi.org/10.1063/1.4721642||Rights:||© 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4721642. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||IAS Journal Articles|
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