View Item 
      •   Home
      • 2. Research Centres and Institutes
      • Institute of Advanced Studies (IAS)
      • IAS Journal Articles
      • View Item
      •   Home
      • 2. Research Centres and Institutes
      • Institute of Advanced Studies (IAS)
      • IAS Journal Articles
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.
      Subject Lookup

      Browse

      All of DR-NTUCommunities & CollectionsTitlesAuthorsBy DateSubjectsThis CollectionTitlesAuthorsBy DateSubjects

      My Account

      Login

      Statistics

      Most Popular ItemsStatistics by CountryMost Popular Authors

      About DR-NTU

      Phase evolution and room-temperature photoluminescence in amorphous SiC alloy

      Thumbnail
      Phase evolution and room-temperature photoluminescence in amorphous SiC alloy.pdf (1.692Mb)
      Author
      Zhou, H. P.
      Xu, M.
      Wei, D. Y.
      Ong, T.
      Xiao, S. Q.
      Xu, L. X.
      Huang, S. Y.
      Guo, Y. N.
      Khan, S.
      Xu, S.
      Date of Issue
      2012
      Research Centre
      Institute of Advanced Studies
      Version
      Published version
      Abstract
      Amorphous SiC thin films with varying phases and compositions have been synthesized using a low frequency inductively coupled high density plasma source in a hydrogen diluted methane (CH4) and silane (SiH4) mixture. The optical and electrical properties along with the microstructures of the thin films are systematically investigated. The feedstock gas ratio of CH4/SiH4 leads to the fluctuations of the optical bandgap, the carbon content, and the transition of Si–Si bonding structure from crystalline to intermediate phase and finally to amorphous phase. Room temperature photoluminescence (PL) with nearly fixed emission energy has been observed in the thin films. The underlying PL mechanism is explained in the framework of quantum confinement-luminescence center model. The photoexcitation process occurs in the nc-Si quantum dots embedded in the host SiC matrix, whereas the photoemission process occurs in the luminescence centers in the surrounding SiC or at SiC-Si interfaces. The PL evolution with the chemical composition in the films is analyzed in terms of the density of the Si quantum dots and the Si–C bond.
      Subject
      DRNTU::Science::Physics
      Type
      Journal Article
      Series/Journal Title
      Journal of applied physics
      Rights
      © 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4721412. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
      Collections
      • IAS Journal Articles
      http://dx.doi.org/10.1063/1.4721412
      Get published version (via Digital Object Identifier)

      Show full item record


      NTU Library, Nanyang Avenue, Singapore 639798 © 2011 Nanyang Technological University. All rights reserved.
      DSpace software copyright © 2002-2015  DuraSpace
      Contact Us | Send Feedback
      Share |    
      Theme by 
      Atmire NV
       

       


      NTU Library, Nanyang Avenue, Singapore 639798 © 2011 Nanyang Technological University. All rights reserved.
      DSpace software copyright © 2002-2015  DuraSpace
      Contact Us | Send Feedback
      Share |    
      Theme by 
      Atmire NV
       

       

      DCSIMG