Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97644
Title: Ultrafine pitch (6-µm) evolution of Cu-Cu bonded interconnects in 3D wafer-on-wafer stacking
Authors: Peng, L.
Zhang, L.
Li, H. Y.
Fan, Ji
Lim, Dau Fatt
Tan, Chuan Seng
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Peng, L., Fan, J., Zhang, L., Li, H. Y., Lim, D. F., & Tan, C. S. (2012). Ultrafine pitch (6-µm) evolution of Cu-Cu bonded interconnects in 3D wafer-on-wafer stacking. 2012 IEEE International Interconnect Technology Conference (IITC).
Abstract: In this paper, we successfully demonstrate ultrahigh density (>; 10^6 cm^-2) Cu-Cu interconnects of 6-μm pitch using wafer-on-wafer thermo-compression bonding. This is a significant improvement from our previous achievement of 15-μm pitch. In addition, we integrate Cu sealing frame with excellent helium leak rate to the bonded structures to promote the overall bond reliability. On top of that, temporary passivation of Cu surface using self-assembled monolayer (SAM) enhances the resistance against oxidation and particle contamination. Finally, thermal cycling test confirmed the thermal stability of the Cu-Cu daisy chain structure up to 1,000 cycles. Hence, this work opens up new opportunity for wafer level integration of Cu-Cu bonding with state-of-the-art TSV technology, enabling future ultrahigh density 3D IC applications.
URI: https://hdl.handle.net/10356/97644
http://hdl.handle.net/10220/12069
DOI: 10.1109/IITC.2012.6251659
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

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