Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/84656
Title: Silicon carbide based inverters for energy efficiency
Authors: Vu, P. L. A.
Rahman, M. A.
Maswood, Ali I.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Maswood, A. I., Vu, P. L. A., & Rahman, M. A. (2012). Silicon carbide based inverters for energy efficiency. 2012 IEEE Transportation Electrification Conference and Expo (ITEC).
Abstract: The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer the possibility of efficiency improvements from reduced conduction and switching losses. The work presented in this paper gives an assessment of the silicon carbide power modules in power inverters. Output characteristics and switching energy loss characteristics based on experimental data are incorporated. Comparison of total power losses and efficiency of a silicon carbide based three phase inverter with silicon base is analyzed and studied. The efficiency of the silicon carbide based inverters based on chosen device is found to be above 99%, and more efficient than most conventional silicon based IGBT inverters. This is most so at high switching frequency.
URI: https://hdl.handle.net/10356/84656
http://hdl.handle.net/10220/12157
DOI: http://dx.doi.org/10.1109/ITEC.2012.6243458
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.