dc.contributor.authorThein, Than Tun
dc.contributor.authorLaw, Choi Look
dc.contributor.authorFu, Kai
dc.date.accessioned2013-07-25T05:56:22Z
dc.date.available2013-07-25T05:56:22Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationThein, T. T., Law, C. L., & Fu, K. (2012). 250 MHZ to 30 GHZ, unilateral circuitmodel for InGaP/GaAs HBT. Progress In Electromagnetics Research C, 26, 1-12.en_US
dc.identifier.issn1937-8718en_US
dc.identifier.urihttp://hdl.handle.net/10220/12219
dc.description.abstractA unilateral circuit model, which precisely predicts small signal response over a wide range of frequencies and bias points, is quantitatively analyzed and presented. The shortfall of current unilateral assumption and transformation technique is presented. A complete and explicit analysis is provided to develop a compact unilateral circuit model. The model is intended to predict input reflection, forward transmission and output reflection coefficients over wide range of frequencies. The technique is validated by transforming bilateral a small signal model of 3 x 3 μm x 40 μm, InGaP/GaAs HBT into its unilateral equivalent over the frequency range of 250 MHz to 30 GHz. The accuracy of the technique is corroborated at various bias conditions; collector current from 3 mA to 150 mA and collector-emitter voltage from 1 V to 5 V. Simulated results show very good agreement between small signal responses of transformed unilateral and bilateral circuit models.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesProgress In electromagnetics research Cen_US
dc.rights© 2012 EMW Publishing. This paper was published in Progress In Electromagnetics Research C and is made available as an electronic reprint (preprint) with permission of EMW Publishing. The paper can be found at the following official DOI: [http://dx.doi.org/10.2528/PIERC11101702]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.title250 MHZ to 30 GHZ, unilateral circuitmodel for InGaP/GaAs HBTen_US
dc.typeJournal Article
dc.contributor.researchResearch Techno Plazaen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.2528/PIERC11101702
dc.description.versionPublished version


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